Multi-scale Modeling of Si and C Nanocluster Nucleation During Non-equilibrium Gas Phase Processing

Nanoclusters are manufactured by various techniques, including organic precursor-based synthetic chemistry, aqueous colloidal processing, low temperature thermalization of organorare-earth clusters, metallo-organic pyrolysis, and laser ablation of different materials. All of these synthesis techniques rely upon cluster growth mechanisms, which are controlled by the chemistry of participating species. Chemical techniques are used for producing semiconductor nanocrystals, for example, and are generally accompanied by the formation of unanticipated by products. Furthermore, the chemical sensitivity toward oxidation or reducibility of chemical constituents, plus the necessary care in the choice of anion or cation precursor components, greatly impact control of nanocrystal production. Chemical reaction rates, or limited availability of suitable chemical precursors, can limit the composition, type and size of nanoparticles and nanoparticle-based structures that can be obtained. When hot gas processing is considered as a route to nanocluster manufacturing, additional degrees of freedom become available to control nanoparticle formation Multi-scale Modeling of Si and C Nanocluster Nucleation During Non-equilibrium Gas Phase Processing